2023 |
INTERNATIONAL JOURNAL OF ELECTRONICS (T&F) |
Differential RVCO with low power, low phase noise and wider tuning range for PLL application |
2023 |
Microelectronics Journal |
Study of ambipolar and linearity behavior of the misaligned double gate-drain dopant-free Nano-TFET: Design and performance enhancement |
2023 |
IEEE Transactions on Nanotechnology |
Design and Analytical Assessment of Non-Ideal Ion-Sensitive β-MIS-(AlGa) 2 O 3 /Ga 2 O 3 High Electron Mobility Transistor |
2023 |
Journal of Electronic Materials, Springer |
Noise Distortion Analysis of the Designed Heterodielectric Dual-Material Gate Dopingless Nanowire FET |
2022 |
Transactions on Electrical and Electronic Materials, Springer |
Design and Investigation of Dual Dielectric Recessed-Gate AlGaN/GaN HEMT as Gas sensor Application |
2022 |
IETE Journal of Research |
Demonstration of Temperature-Dependent Analysis of GAA–β-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor |
2022 |
Silicon, Springer |
Design of Dopingless GaN Nanowire FET with Low ‘Q’ for High Switching and RF Applications |
2022 |
Journal of Silicon, Springer. |
Ashok Kumar Gupta and Ashish Raman, Performance Enhancement and Signal Distortion Analysis of Virtually Doped Nanotube Tunnel FET with Embedded Ferroelectric Gate Oxide |
2022 |
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 35(2),e2960, Wiley |
Effects of gate width variation on the performance of Normally-OFF dual-recessed gate MIS AlGaN/GaN HEMT |
2022 |
Engineering Research Express, IOP Science |
Investigation of variation in temperature on steep subthreshold slope nanowire tunnel field effect transistor based biosensor |
2022 |
Transaction on Electrical and Electronics Material, Springer |
Design and Investigation of Dual Dielectric Recessed-Gate AlGaN/GaN HEMT as Gas sensor Application |
2022 |
IEEE Transactions on Electron Devices |
CuO/Pentacene Type-II Planar Heterojunction for UV-Vis-NIR Photodetection with High EQE |
2022 |
Transactions on Electrical and Electronic Materials |
Design and Investigation of Dual Dielectric Recessed-Gate AlGaN/GaN HEMT as Gas sensor Application |
2022 |
ECS Journal of Solid State Science and Technology, IOP Science |
Charge-Plasma Based Cylindrical Nanowire FET for Low-Noise and High Sensing (in-press) |
2022 |
Journal of Superlattices and Microstructures, Elsevier |
Design and investigation of field plate-based vertical GAA – β-(AlGa)2O3/Ga2O3 high electron mobility transistor (in-press) |
2022 |
Silicon, Springer |
Ashok Kumar Gupta and Ashish Raman, Design Considerations and Optimization of Electrostatic Doped Ferroelectric Nanotube Tunnel FET: Analog and Noise Analysis |
2021 |
Transaction on Electrical and Electronics Material |
Dhruv Garg, Ashish Raman, Balwinder Raj and Grish Wadhwa, Surface Potential and Drain Current 2D Analytcal Modeling of Low Power Double Gate Tunnel FET |
2021 |
Journal of Silicon, Springer |
Rajneesh Sharma, Ashwani K. Rana, Shelza Kaushal, Justin B. King, and Ashish Raman, Analysis of Underlap Strained Silicon on Insulator MOSFET for Accurate and Compact Modeling |
2021 |
Journal of Silicon, Springer |
lubhawana okte, Ashish Raman, Balwinder Raj and Naveen Kumar, Junctionless Silicon Nanotube Tunnel Field-effect Transistor-based Resistive Temperature Detector |
2021 |
Transactions on Electrical and Electronic Materials |
Ranjan, R., Kashyap, N., Raman, A., Novel Vertical GAA-AlGaN/GaN Dopingless MIS-HEMT: Proposal and Investigation |
2021 |
Journal of Electronic Materials, Springer |
Gupta, A.K., Raman, A., Design, Investigation, and Sensitivity Analysis of a Biosensor Based on an Optimized Electrostatically Doped Nanotube TFET |
2021 |
Journal of Silicon, Springer. |
Shamshad Alam, Ashish Raman, Balwinder Raj, Sarabdeep Singh and Naveen Kumar,Design and analysis of Gate overlapped/underlapped NWFET based label free biosensor |
2021 |
Journal of Silicon, Springer |
Ashok Kumar Gupta and Ashish Raman, “Performance Enhancement and Signal Distortion Analysis of Virtually Doped Nanotube Tunnel FET with Embedded Ferroelectric Gate Oxide |
2021 |
Journal of Silicon |
Tweaking the Performance of Dopingless Nano-TFET with Misaligned Sandwiched Dual-Gate Structure |
2021 |
Journal of Silicon |
lubhawana okte, Ashish Raman, Balwinder Raj and Naveen Kumar, Junctionless Silicon Nanotube Tunnel Field Effect Transistor Based Resistive Temperature Detector |
2021 |
Journal of Electronic Materials, Volume 50, Issue 9, Pages 5462 - 5471, Springer |
Design, Investigation, and Sensitivity Analysis of a Biosensor Based on an Optimized Electrostatically Doped Nanotube TFET |
2021 |
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley |
Effects of gate width variation on the performance of Normally-OFF dual-recessed gate MIS AlGaN/GaN HEMT (in-press) |
2021 |
Journal of Silicon |
Utkarsh Uppadhya, Ashish Raman and Ravi Ranjan and Naveen Kumar, Overlapped Gate-Source/Drain H-shaped TFET: Proposal, Design and Linearity Analysis |
2021 |
Journal of Silicon |
Design Considerations and Optimization of Electrostatic Doped Ferroelectric Nanotube Tunnel FET: Analog and Noise Analysis (in-press) |
2020 |
Journal of Silicon, Springer. |
Sarabdeep Singh and Ashish Raman, Design and Investigation of Pressure Sensor based on Charge Plasma Silicon NWFET with Cylindrical Gate Diaphragm |
2020 |
Journal of Applied Physics A Springer, Vol - 126, 169: 1-9 |
Ravi Kumar, Nitesh Kashyap and Ashish Raman, High-Performance Dual Gate-Charge Plasma-AlGaN/GaN MIS-HEMT |
2020 |
Superlattice and Microstructure Journal,Vol-111, pp- 518-528, Elsevier |
Sarabjeet Kaur, Ashish Raman and R K Sarin, An Explicit Surface Potential, Capacitance and Drain Current Model for Double-Gate TFET |
2020 |
Applied Physics A, Spinger, Vol- 126, 441. |
Deep Shekhar and Ashish Raman, Design and analysis of Dual-gate misalignment on the performance of Dopingless Tunnel Field Effect Transistor |
2020 |
IEEE Transaction of Nanotechnology, Vol- 19, pp- 421 – 428 |
Naveen Kumar and Ashish Raman, Novel Design Approach of Extended Gate-on-Source based Charge-Plasma Vertical Nanowire TFET: Proposal and Extensive Analysis |
2020 |
Journal of applied Physics A, Vol- 126, 573 Springer |
Ashok Kumar Gupta and Ashish Raman, Performance Analysis of electrostatic plasma-based dopingless Nanotube TFET |
2020 |
IEEE Transaction of Nanotechnology |
Naveen Kumar and Ashish Raman, Proscriptive Sensing Applications of Novel Hetromaterial based Dopingless Nanowire-TFET at Low Operating Voltage |
2020 |
Journal of Silicon, Springer. |
Ashok Kumar Gupta and Ashish Raman, Electrostatic-Doped Nanotube TFET: Proposal, Design, and Investigation with Linearity Analysis |
2020 |
Journal of applied Physics A, Springer |
Sarabjeet Kaur, Ashish Raman and R K Sarin, Analytical Modeling of Surface Potential, Capacitance and Drain Current of Heterojunction TFET |
2020 |
Journal of Silicon, Springer. |
Naveen Kumar and Ashish Raman, Novel Asymmetric Recessed-Gate/Source Architecture Advancement of Dual-Metal-Gate SiGe/Si Dopingless Nanowire-TFET for Low-Voltage Performance Optimization |
2020 |
Journal of Silicon, Springer |
Ashok Kumar Gupta, Ashish Raman and Naveen Kumar, Performance Tuning and Reliability Analysis of the Electrostatically Configured Nanotube Tunnel FET with Impact of Interface Trap Charges |
2020 |
Transactions on Electrical and Electronic Materials, Springer |
Ravi Ranjan, Nitesh Kashyap and Ashish Raman, “Novel Vertical GAA-AlGaN/GaN Dopingless MIS-HEMT: Proposal and Investigation |
2020 |
Journal of Applied Physics A, Springer |
Krishan Kumar, Ashish Raman, Balwinder Raj, Naveen Kumar and Sarabdeep Sing, Design and Optimization of Junctionless based Devices with Noise Reduction for Ultra-High Frequency Applications |
2020 |
Superlattice and Microstructure Journal, Vol-111, pp- 518-528, Elsevier |
Sarabjeet Kaur, Ashish Raman and R K Sarin, A Charge-based Capacitance Model for Double-Gate Hetero-Gate-Dielectric Tunnel FET |
2020 |
IEEE VLSI Circuit and System Letter (TCVLSI) |
Sarabdeep Singh, Ashish Raman and Sanjeev Kumar Sharma, Analysis of conventional doped and charge plasma dopingless Silicon Nanowire FET |
2020 |
IEEE VLSI Circuits & Systems Letter (VCAL) |
N.Shivaprasad, Ashish Raman, Deepak Bharti and Balwinder Raj, UV Photo Response of Semiconductor: Polymer blend Organic Field Effect Transistors |
2019 |
IEEE Transactions on Electron Devices, ”, Vol 66, Issue 10, pp- 4453-4460, . (Impact Factor = 2.605) |
Naveen Kumar and Ashish Raman, “Performance assessment of Charge-Plasma based Cylindrical GAA Vertical Nanowire-TFET with Impact of Interface Trap Charges |
2019 |
Silicon Journal, Vol- 12, pp- 1-11, 1769–1777 Springer. |
Prabhat Singh, Ashish Raman and Naveen Kumar, “Spectroscopic and Simulation Analysis of Facile PEDOT: PSS layer deposition-Silicon for Perovskite Solar Cell |
2019 |
Journal of applied Physics A, Vol- 125, 787, pp-1-11, Springer, |
Ashish Raman, Manish Bansal, Naveen Kumar and Deepti Kakkar, “Design and Performance Analysis of GAA Schottky Barrier-Gate Stack-Dopingless Nanowire-FET for Phosphine Gas Detection |
2019 |
Journal of Microsystem Technologies, Vol- 26, pp-1343–1350, Springer |
Naveen and Ashish Raman, Low Voltage Charge-Plasma based Dopingless Tunnel Field Effect Transistor: Analysis and Optimization |
2019 |
Journal of Silicon, Springer. |
Ashok Kumar Gupta, Ashish Raman and Naveen Kumar, Cylindrical Nanowire-TFET with Core-Shell Channel Architecture: Design and Investigation |
2019 |
Silicon Journal, Springer. |
Naveen and Ashish Raman, Design and Analog Performance Analysis of Charge-Plasma based Cylindrical GAA Silicon Nanowire Tunnel Field Effect Transistor |
2019 |
Journal of Super Lattice and Microstructure, Vol 125,pp- 256-270, Elsevier, ISSN : 0749-6036 (2019) |
Design and Analysis of Electrostatic-Charge Plasma based Dopingless IGZO Vertical Nanowire FET for Ammonia Gas Sensing”, Journal of Super Lattice and Microstructure |
2019 |
Journal of Nanoelectronics and Optoelectronics, Vol. 14, No-06, pp. 825–832 (2019). |
Design and Analysis of Source Engineered with High Electron Mobility Material Triple Gate Junctionless Field Effect Transistor |
2019 |
IEEE Transactions on Electron Devices, VOL 63, Issue 03, pp 1468-1474 |
Design and Investigation of Charge-Plasma based Workfunction Engineered Dual Metal-Heterogeneous Gate Si-Si0.55Ge0.45 GAA-Cylindrical NWTFET for Ambipolar Analysis |
2019 |
Journal of applied Physics A, (Springer) (In-Press) |
Nano Cantilever Tri-Gate Junctionless Cuboidal Nanowire-FET based Directional Pressure Sensor |
2019 |
IEEE Transactions on Electron Devices (In-Press) |
Design and Investigation of a Novel Charge Plasma based Core-Shell Ring-TFET: Analog and Linearity Analysis |
2018 |
Journal of Nanoelectronics and Optoelectronics (ASP) |
Design and Analysis of pressure sensor based on MEMS cantilever structure and pocket doped GD-TFET (In-Press) |
2018 |
Journal of Computational Electronics, Springer, Vol-17, No. 3, pp- 967-976, 2018. |
A Dopingless Gate All Around (GAA) Gate Stacked Nanowire-FET with reduced effect of parametric fluctuations |
2018 |
IEEE Transactions on Electron Devices, vol. 65, no. 7, pp. 3026-3032, 2018. |
Gate all around (GAA) charge plasma based dual material gate stack nanowire FET for enhanced Analog Performance |
2017 |
Journal of Super Lattice and Microstructure, (elsevier) |
A novel high mobility In1-xGaxAs cylindrical-gate-nanowire FET for gas sensing application with enhanced sensitivity |
2016 |
Journal of Mobile Computing, Communications & Mobile Networks |
Analysis and Comparison of Optimization Techniques for Interference Duration in Cognitive Radio |
2016 |
Int. J. Information and Communication Technology |
Design and analysis of RF-low power and low-phase noise CMOS ring oscillator for fully integrated RF communication systems technologies |
2016 |
Journal of Superlattices and Microstructures”, (elsevier) |
Pressure sensor based on MEMS nano-cantilever beam structure as a heterodielectric gate electrode of dopingless TFET |
2016 |
Journal of Semiconductor, (IOP-Science) |
Dual Material Gate Based DG-IMOS: Design and Optimization Analysis |
2015 |
Wulfenia Journal |
A 180 nm Transmission Gate Based Micro-Power Ring Oscillator for Wireless Telemetry Applications |
2015 |
Journal of VLSI Design Tools and Technology |
A Review on Charge Pump Circuits for PLL Applications |
2015 |
Journal of Electronics Design and Technology |
Designing of Low Power Charge Pump Circuit with Minimum Current Mismatch for High Speed PLL Applications |
2015 |
Recent Trends in Sensor Research & Technology Journal |
Optimization of Sensing Parameters Using PSO, GA Algorithms for Cognitive Radio |
2013 |
International Journal of Advanced Science and Technology (IJAST), (SERSC) |
Design and Investigative Aspects of RF-Low Power 0.18 μm based CMOS Differential Ring Oscillator |
2013 |
International Journal of Engineering Research & Technology |
Phase and Frequency Detector For Low Jitter And High Speed Applications-Review |
2013 |
Int. J. Biomedical Engineering and Technology (Inderscience) |
The design of a novel delay cell based 8.3 GHz, low phase noise ring oscillator in C-MOS 180 nm technology for biomedical ultra-wide-band integrated applications |